Delta-dopage de couches de silicium élaborées par épitaxie par jet moléculaire avec implantation d'ions Sb de faible énergie. Application à la réalisation de transistor à effet de champ à grille tungstène = Delta-doping in silicon molecular beam epitaxy using low-energy Sb ions. Application to δ-MESFET processingDufour-Gergam, Elisabeth; Vapaille, André.1992, 258 p.Thesis

Synthèse et caractérisation de nouvelles molécules chirales : application aux mélangessmectiques C* ferroélectriquesBaillon Moussel, Christine; Le Goffic, François.1989, 215 p.Thesis

Effect of defects and dopants in graphene on hydrogen interaction in graphene-supported NaAlH₄LINGYUN XU; QINGFENG GE.International journal of hydrogen energy. 2013, Vol 38, Num 9, pp 3670-3680, issn 0360-3199, 11 p.Article

Etude de la réaction directe tungstène-silicium : application à un procédé de métallisationauto-aligné en microélectroniqueBourhila, Noureddine; Pfister, Jean-Claude.1989, 186 p.Thesis

'Atomistic' simulation of ultra-submicron MESFETsVAZ, K. F; OSORIO, F. A. P; BORGES, A. N et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 599-602, issn 0959-8324, 4 p.Conference Paper

Why is it possible to detect doped regions of semiconductors in low voltage SEM : a review and updateEL-GOMATI, M; ZAGGOUT, F; JAYACODY, H et al.Surface and interface analysis. 2005, Vol 37, Num 11, pp 901-911, issn 0142-2421, 11 p.Conference Paper

Sr- and Ti-site substitution, lattice dynamics, and octahedral tilt transition relationship in SrTiO₃:Mn ceramicsTKACH, Alexander; VILARINHO, Paula M; NUZHNYY, Dmitry et al.Acta materialia. 2010, Vol 58, Num 2, pp 577-582, issn 1359-6454, 6 p.Article

Effects of rare earth Eu doping on ferroelectric properties of PbZr_0.52Ti_0.48O₃ thin films by sol-gel methodsYU, Y. J; CHAN, H. L. W; WANG, F. P et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 726-732, issn 0167-9317, 7 p.Conference Paper

Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETsYIMING LI; CHENG, Hui-Wen; CHIU, Yung-Yueh et al.Microelectronic engineering. 2011, Vol 88, Num 7, pp 1269-1271, issn 0167-9317, 3 p.Conference Paper

Mechanisms of dopants influence on hydrogen uptake in COF-108: A first principles studySONG, Y; DAI, J. H.International journal of hydrogen energy. 2013, Vol 38, Num 34, pp 14668-14674, issn 0360-3199, 7 p.Article

Improving SO₂ gas sensing properties of graphene by introducing dopant and defect: A first-principles studyLIU, Xu-Ying; ZHANG, Jian-Min; XU, Ke-Wei et al.Applied surface science. 2014, Vol 313, pp 405-410, issn 0169-4332, 6 p.Article

The effect of cavitating ultrasound on the heterogeneous aqueous hydrogenation of 3-buten-2-ol on Pd-blackDISSELKAMP, R. S; CHIN, Ya-Huei; PEDEN, C. H. F et al.Journal of catalysis (Print). 2004, Vol 227, Num 2, pp 552-555, issn 0021-9517, 4 p.Article

Ce-doped LuAG single-crystal fibers grown from the melt for high-energy physicsXU, X; LEBBOU, K; MORETTI, F et al.Acta materialia. 2014, Vol 67, pp 232-238, issn 1359-6454, 7 p.Article

Role of K₂CO₃ as an n-type dopant in enhancing the electron injection and transport of organic light-emitting devicesKAO, Po-Ching; CHANG, Chin-Chih; LIN, Shu-Yi et al.Surface & coatings technology. 2013, Vol 231, pp 135-139, issn 0257-8972, 5 p.Conference Paper

INFLUENCE DES ELEMENTS DOPANTS SUR LA QUANTITE DE DIAMANT SYNTHETISE EN PRESENCE DE CATALYSEURS METALLIQUESSHTERENBERG LE; SLESAREV VN; VERESHCHAGIN LF et al.1972; ZH. FIZ. KHIM.; S.S.S.R.; DA. 1972; VOL. 46; NO 6; PP. 1476-1479; BIBL. 16 REF.Serial Issue

Atom probe tomography: from physical metallurgy towards microelectronicsBLAVETTE, Didier; DUGUAY, Sebastien; PAREIGE, Philippe et al.International journal of materials research. 2011, Vol 102, Num 9, pp 1074-1081, issn 1862-5282, 8 p.Article

Microstructure evolution in aqueous solutions of cetyl trimethylammonium bromide (CTAB) and phenol derivativesAGARWAL, Vivek; SINGH, Mohit; MCPHERSON, Gary et al.Colloids and surfaces. A, Physicochemical and engineering aspects. 2006, Vol 281, Num 1-3, pp 246-253, issn 0927-7757, 8 p.Article

Enhanced efficiency of dye-sensitized TiO₂ solar cells (DSSC) by doping of metal ionsKYUNG HYUN KO; YOUNG CHEOL LEE; YOUNG JIN JUNG et al.Journal of colloid and interface science. 2005, Vol 283, Num 2, pp 482-487, issn 0021-9797, 6 p.Article

Electrical properties of polymer photovoltaic cells using pentacene-doped PEDOT: PSS as a hole conducting layerKIM, Hyunsoo; CHANDRAN, Midhun; PARK, Sujin et al.Surface and interface analysis. 2012, Vol 44, Num 11-12, pp 1511-1514, issn 0142-2421, 4 p.Conference Paper

Surface evaluation and electrochemical behaviour of doped silane pre-treatments on galvanised steel substratesTRABELSI, W; CECILIO, P; FERREIRA, M. G. S et al.Progress in organic coatings. 2007, Vol 59, Num 3, pp 214-223, issn 0300-9440, 10 p.Conference Paper

N-doped SnO₂ nanocrystals with green emission dependent upon mutual effects of nitrogen dopant and oxygen vacancyZHOU, G. X; XIONG, S. J; WU, X. L et al.Acta materialia. 2013, Vol 61, Num 19, pp 7342-7347, issn 1359-6454, 6 p.Article

Highly permeable La_0.2Ba_0.8Co_0.8Fe_0.2-_xZr_xO_3-δ membranes for oxygen separationFAN, Chuan-Gang; ZUO, Yan-Bo; LI, Jian-Tong et al.Separation and purification technology. 2007, Vol 55, Num 1, pp 35-39, issn 1383-5866, 5 p.Article

Intersoliton hopping in lightly doped polyacetylene: assistance by vibrational motion of the dopantYAMABE, T; TANAKA, K; YAMANAKA, S et al.The Journal of chemical physics. 1985, Vol 82, Num 12, pp 5737-5741, issn 0021-9606Article

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Roles of titanium dioxide and ion-doped titanium dioxide on photocatalytic degradation of organic pollutants (phenolic compounds and dyes) in aqueous solutions: A reviewCHAO MIN TEH; ABDUL RAHMAN MOHAMED.Journal of alloys and compounds. 2011, Vol 509, Num 5, pp 1648-1660, issn 0925-8388, 13 p.Article